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IR Photodiode 960nm,S1337-66BR
S1337-66BR - IR Photodiode 960nm,, Hamamatsu
175-22-097
S1337-66BR

IR Photodiode 960nm,

Image is for illustrative purposes only. Please refer to product description.

1 min order
Product specifications
340 nm
1.1 um
960 nm
100 pA
1 us

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Product Information

Family Information

  • Silicon photo diode in ceramic housing
  • With large, light-sensitive chip
  • Suitable for measuring and calibrating laser diodes
  • The short-circuit current of the photodiode, divided by the sensitivity of the diode with the incoming wavelength, results in the radiation power of the laser diode
  • Photo diode saturation should be avoided during measurement

Legislation and compliance

RoHS
No Information
REACH Regulation No SVHC

Additional information

Country of origin Japan (JP)
Manufacturer Hamamatsu
Gross weight (incl. package) 0.6 Gram
Dimensions (incl. package) 12 x 10 x 9 MM
Customs number 8541.4200
UNSPSC (v5.03) 32111506